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Partname:T35L6464A-5Q
Description:0.5 to 4.6V; 1.6W; 64K x 64 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter
Manufacturer:
Package:QFP
Pins:128
Oper. temp.:0 to 70
Datasheet:PDF (160K).
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The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

Click here to download T35L6464A-5Q Datasheet
Click here to download T35L6464A-5Q Datasheet
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