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Partname: | T35L6432B |
Description: | 64K x 32 SRAM???? |
Manufacturer: | |
Datasheet: | PDF (162K). Click here to download *) |
The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM integrates 65536 x 32 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining |
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