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Partname: | T35L6432B-10Q |
Description: | 0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
Manufacturer: | |
Package: | QFP |
Pins: | 100 |
Oper. temp.: | 0 to 70 |
Datasheet: | PDF (162K). Click here to download *) |
The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM integrates 65536 x 32 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining |
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Click here to download T35L6432B-10Q Datasheet*) |
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