The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global systems for mobile communications (GSM). It uses Texas Instruments RFMOSTM process and consists of a three-stage amplifier with output power control. Few external components are required for operation. The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF output port, RFOUT, require simple external matching networks. A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications for time-division multiple-access (TDMA) systems. The power control signal causes a change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of 43 dBm at VPC = 0 V to a typical value of 35 dBm at VPC = 3 V. Forward isolation with the RF input power applied to RFIN at 5 dBm, VPC = 0 V, is typically 48 dB. The TRF7610 is available in a thermally enhanced, surface-mount, 24-pin PowerPADTM (PWP) thin-shrink small-outline package (TSSOP). It is characterized for operation from 40C to 85C operating free-air temperature. In order to maintain acceptable thermal operating conditions, the device should be operated in pulse applications such as the GSM standard 1/8 duty cycle. The package has a solderable pad that improves the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to the printed circuit-board (PCB) ground plane as a continuation of the regular package terminals that are designated GND.