The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 A, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120 is characterized for an operating junction temperature range, TJ, from 40C to 150C. AVAILABLE OPTIONS