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    | Partname: | TPS1100DR |  | Description: | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFET |  | Manufacturer: | Texas Instruments |  | Package: | D |  | Pins: | 8 |  | Datasheet: | PDF (155K). Click here to download *)
 |  | The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 A, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. |  |  Click here to download TPS1100DR Datasheet*)
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