The TPA2012D2 features independent shutdown controls for each channel. The gain can be selected to 6, 12, 18, or 24 dB utilizing the G0 and G1 gain select pins. High PSRR and differential architecture provide increased immunity to noise and RF rectification. In addition to these features, a fast startup time and small package size make the TPA2012D2 an ideal choice for both cellular handsets and PDAs. The TPA2012D2 is capable of driving 1.4 W/Ch at 5 V or 720 mW/Ch at 3.6 V into 8 . The TPA2012D2 is also capable of driving 4 . The TPA2012D2 provides thermal and short circuit protection.