The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each. This device features maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM. All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J-lead plastic surface-mount SOJ package ( DJ suffix) and a 20 / 26-lead plastic small outline package ( DGA suffix). These devices are characterized for operation from 0C to 70C.