The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.