The TMS416100/P series are high-speed, 16 777 216-bit dynamic random-access memories, organized as 16 777 216 words of one bit each. The TMS416100P series feature self refresh and extended refresh. They employ state-of-the-art EPICTM (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low power at a low cost. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All inputs, outputs, and clocks are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS416100/P are offered in 300-mil 24/26-lead plastic surface-mount SOJ packages (DJ suffix) and 24/26-lead plastic small-outline packages (DGA suffix). All packages are characterized for operation from 0C to 70C.