The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO-8 package. Both MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. TC6320TG, a complementary high-speed, high voltage, gate-clamped N- and P-channel MOSFET pair in a single SO-8 package. The TC6320TG offers 200V breakdown voltage, 2.0A output peak current and low input capacitance. The 2.0A output current capability will minimize rise and fall times. The low input capacitance will minimize propagation delay times and also rise and fall times. The MOSFETs have integrated gate-source resistors and gate-source zener diode clamps that are desired for high voltage pulser applications saving board space and improving performance. It is specifically designed for applications in medical ultrasound transmitters and nondestructive evaluation in materials flaw detection, but it can also be used as an efficient buffer.