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| Partname: | STPSC806D |
| Description: | 600 V power Schottky silicon carbide diode |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (93.8K).
Click here to download *) |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. |
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Click here to download STPSC806D Datasheet*) |
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