|
|
|
|
| Partname: | STPSC1006D |
| Description: | 600 V power Schottky silicon carbide diode |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (96.1K).
Click here to download *) |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. |
|
Click here to download STPSC1006D Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
