SGSD311FI Datasheet - 150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor from SGS-Thomson Microelectronics

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Partname:	SGSD311FI
Description:	150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor
Manufacturer:	SGS-Thomson Microelectronics
Package:	ISOWATT218
Pins:	3
Datasheet:	PDF (293K). Click here to download ^*)

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