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Partname: | SD57060-01 |
Description: | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS |
Manufacturer: | SGS-Thomson Microelectronics |
Datasheet: | PDF (71.8K). Click here to download *) |
The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. |
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 Click here to download SD57060-01 Datasheet*) |
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