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| Partname: | SD56120 |
| Description: | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (43.9K).
Click here to download *) |
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. |
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Click here to download SD56120 Datasheet*) |
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