|  | 
    
     |   |  
     | 
 
 
 
  | 
    | Partname: | PD85035STR-E |  | Description: | RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |  | Manufacturer: | SGS-Thomson Microelectronics |  | Datasheet: | PDF (384K). Click here to download *)
 |  | The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E's superior linearity performance makes it an ideal solution for car mobile radio. |  |  Click here to download PD85035STR-E Datasheet*)
 |  |  |  | *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |  |  |  |