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Partname:PD85025TR-E
Description: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Manufacturer:SGS-Thomson Microelectronics
Datasheet:PDF (361K).
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The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85025-E's superior linearity performance makes it an ideal solution for car mobile radio.

Click here to download PD85025TR-E Datasheet
Click here to download PD85025TR-E Datasheet
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