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| Partname: | PD57070STR-E |
| Description: | RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (483K).
Click here to download *) |
The PD57070 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57070 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. PD57070's superior linearity performance makes it an ideal solution for base station applications. |
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Click here to download PD57070STR-E Datasheet*) |
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