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| Partname: | PD57060TR-E |
| Description: | RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (488K).
Click here to download *) |
The PD57060-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57060-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. PD57060-E's superior linearity performance makes it an ideal solution for base station applications. |
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Click here to download PD57060TR-E Datasheet*) |
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