ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
More than
480 527 
registered clients
Partname:PD57006STR-E
Description: RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Manufacturer:SGS-Thomson Microelectronics
Datasheet:PDF (397K).
Click here to download *)

The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006's superior linearity performance makes it an ideal solution for car mobile radio.

Click here to download PD57006STR-E Datasheet
Click here to download PD57006STR-E Datasheet
*)
*)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.
Free Electronics Engineering Subscription
Win Win Circuit - PCB,PCBA,Touch Screen,LED Lighting
Win Win Circuit LTD. PCB, PCBA, LCD Module
www.wwteq.com
COPYRIGHT 1997-2024 ChipDocs  ALL RIGHT RESERVED