|  | 
    
     |   |  
     | 
 
 
 
  | 
    | Partname: | PD57006-E |  | Description: | RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |  | Manufacturer: | SGS-Thomson Microelectronics |  | Datasheet: | PDF (397K). Click here to download *)
 |  | The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006's superior linearity performance makes it an ideal solution for car mobile radio. |  |  Click here to download PD57006-E Datasheet*)
 |  |  |  | *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |  |  |  |