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| Partname: | PD57002-E |
| Description: | RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (358K).
Click here to download *) |
The PD57002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1GHz. The PD57002 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. |
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Click here to download PD57002-E Datasheet*) |
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