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| Partname: | PD55008STR-E |
| Description: | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (501K).
Click here to download *) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. |
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Click here to download PD55008STR-E Datasheet*) |
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