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Partname: | PD55008-E_10 |
Description: | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
Manufacturer: | SGS-Thomson Microelectronics |
Datasheet: | PDF (501K). Click here to download *) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. |
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![Click here to download PD55008-E_10 Datasheet](../../../pndecoder/datasheets/STM/img/011769.gif) Click here to download PD55008-E_10 Datasheet*) |
![](http://www.chipdocs.com/common/img/1x10t.gif) |
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