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Partname:MSC82307
Description:GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS
Manufacturer:SGS-Thomson Microelectronics
Datasheet:PDF (51.4K).
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The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range.

Click here to download MSC82307 Datasheet
Click here to download MSC82307 Datasheet
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