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Partname:M59BW102
Description:1 MBIT (64KB X16, BURST) LOW VOLTAGE FLASH MEMORY
Manufacturer:SGS-Thomson Microelectronics
Datasheet:PDF (181K).
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The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The device can be programmed and erased over 100,000 cycles.

Click here to download M59BW102 Datasheet
Click here to download M59BW102 Datasheet
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