|
|
|
|
| Partname: | LET9130 |
| Description: | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (57.6K).
Click here to download *) |
The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity. |
|
Click here to download LET9130 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
