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| Partname: | LET8180 |
| Description: | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (33.5K).
Click here to download *) |
The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity. |
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Click here to download LET8180 Datasheet*) |
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