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| Partname: | LET21030C |
| Description: | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (62.6K).
Click here to download *) |
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. |
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Click here to download LET21030C Datasheet*) |
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