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| Partname: | LET21008 |
| Description: | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (40.8K).
Click here to download *) |
The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD |
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Click here to download LET21008 Datasheet*) |
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