|
|
|
|
| Partname: | LET20030C |
| Description: | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (37.4K).
Click here to download *) |
The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. |
|
Click here to download LET20030C Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
