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| Partname: | LET20015 |
| Description: | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE |
| Manufacturer: | SGS-Thomson Microelectronics |
| Datasheet: | PDF (67.5K).
Click here to download *) |
The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20015's superior linearity performance makes it an ideal solution for base station applications. |
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Click here to download LET20015 Datasheet*) |
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