IRF822FI Datasheet - N-channel enhancement mode power MOS transistor, 500V, 1.9A from SGS-Thomson Microelectronics

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Partname:	IRF822FI
Description:	N-channel enhancement mode power MOS transistor, 500V, 1.9A
Manufacturer:	SGS-Thomson Microelectronics
Package:	ISOWATT220
Pins:	3
Oper. temp.:	-65 to 150
Datasheet:	PDF (169K). Click here to download ^*)

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