The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-001 is supplied int the AMPACTM Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability ap-