The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits word alterable E2PROM manufactured with SST's proprietary, high performance SuperFlash Technology. The SST38VF166 erases and programs with a single power supply. The internal Erase/Program in the E2 bank is transparent to the user. The device conforms to (proposed) JEDEC standard pinouts for word-wide memories. The SST38VF166 device is divided into three separate memory banks, 2 each 512K x16 Flash banks and a 4K x16 E2 bank. Each Flash bank is typically used for program code storage and contains 512 sectors, each of 1 KWords or 16 blocks, each of 32 KWords. The Flash banks may also be used to store data. The E2 bank is typically used for data or configuration storage and contains 128 sectors, each of 32 words. Any bank may be used for executing code while writing data to a different bank. Each memory bank is controlled by separate Bank Enable (BE#) lines. The SST38VF166 inherently uses less energy during Erase, Program, and Write than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses