The SST34HF16xG ComboMemory devices integrate a 1M x16 CMOS flash memory bank with either 128K x16 or 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST's proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16xG devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The SST34HF16xG devices offer a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. With high-performance Program 2004 Silicon Storage Technology, Inc. S71276-00-000