The SST34HF16x1A and SST34HF1681 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with either a 128K x16, 256K x16, or 512K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST's proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x1A and SST34HF1681 devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system. The SST34HF16x1A and SST34HF1681 feature dual flash memory bank architecture allowing for concurrent operations between the two flash memory banks and the SRAM. The devices can read data from either bank while an Erase or Program operation is in progress in the opposite bank. The two flash memory banks are partitioned into 4 Mbit and 12 Mbit with bottom sector protection options for storing boot code, program code, configuration/parameter data and user data.