The SST32HF802/162/164 ComboMemory devices integrate a 512K x16 or 1M x16 CMOS flash memory bank with a 128K x16 or 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST's proprietary, high performance SuperFlash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 sec. The entire flash memory bank can be erased and programmed word-by-word in typically 8 seconds for the SST32HF802 and 15 seconds for the SST32HF162/164, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent flash write, the SST32HF802/ 162/164 devices contain on-chip hardware and software data protection schemes.The SST32HF802/162/164 devices offer a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST32HF802/162/164 devices consist of two independent memory banks with respective bank enable signals. The Flash and SRAM memory banks are superimposed in the same memory address space. Both memory banks share common address lines, data lines, WE# and OE#. The memory bank selection is done by memory bank enable signals. The SRAM bank enable signal, BES# selects the SRAM bank. The flash memory 2001 Silicon Storage Technology, Inc. S71171-05-000 8/01