The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE512 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE512 conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Page-Write, the SST29EE/ LE/VE512 provide a typical Byte-Write time of 39 sec. The entire memory, i.e., 64 KBytes, can be written pageby-page in as little as 2.5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE/LE/VE512 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE/LE/VE512 are offered with a guaranteed Page-Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years.