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Partname:SST29EE512-70-4I-NHE
Description:512 Kbit (64K x8) Page-Write EEPROM
Manufacturer:Silicon Storage Technology, Inc
Datasheet:PDF (429K).
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The SST29EE512 is a 64K x8 CMOS, Page-Write EEPROM manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE512 conforms to JEDEC standard pin assignments for byte-wide memories. Featuring

Click here to download SST29EE512-70-4I-NHE Datasheet
Click here to download SST29EE512-70-4I-NHE Datasheet
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