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Partname:KM611001
Description:1M x 1Bit High-Speed CMOS SRAM
Manufacturer:Samsung Electronic
Datasheet:PDF (95.8K).
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The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated using Samsung`s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in highdensity high-speed system applications. The KM611001/L is packaged in a 400 mil 28-pin plastic DIP or SOJ.

Click here to download KM611001 Datasheet
Click here to download KM611001 Datasheet
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