The HYB39S16400/800/160CT are dual bank Synchronous DRAM's based on SIEMENS 0.25 m process and organized as 2 banks x 2 MBit x 4, 2 banks x 1 MBit x 8 and 2 banks x 512 kbit x 16 respectively. These synchronous devices achieve high speed data transfer rates up to 125 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS' advanced 16 MBit DRAM process technology.