The HYB39S16160CT-6/-7 are high speed dual bank Synchronous DRAM's based on SIEMENS 0.25m process and organized as 2 banks x 512kbit x 16. These synchronous devices achieve high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS' advanced 16MBit DRAM process technology. The device is designed to comply with all JEDEC standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. Operating the two memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 166 MHz is possible depending on burst length, CAS latency and speed grade of the device. Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3V +/- 0.3V power supply and are available in TSOPII packages. These Synchronous DRAM devices are available with LV-TTL interfaces.