The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50 input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final dual-mode GMSK/8PSK RF amplifier in GSM, DCS and PCS handheld cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, and in the 1710MHz to 1910MHz bands. Internal band select provides control to select the GSM850/GSM900 or DCS/PCS band. The device is packaged on ultra-small LCC, minimizing the required board space.