The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm LCC. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port.