The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps.