The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages.