The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in AMPS and ETACS handheld equipment, spread spectrum systems, CDPD, and other applications in the 800MHz to 950MHz band. On-board power control provides over 30dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. Although it is intended for class C operation, linear class AB operation can be achieved by raising the bias level. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. Optimum Technology Matching Applied Si BJT