The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 960MHz band. The device is well suited for either CW or pulsed applications. At 3V, the RF2119 can deliver 29.5dBm of linear output power. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground.